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Features 3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process th.
3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V RDS(ON) = 0.140 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are r.
FDS6961A - ON Semiconductor
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been esp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6900AS |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | FDS6900AS |
Fairchild Semiconductor |
Dual N-Ch PowerTrench SyncFET |
|
| 3 | FDS6900AS-G |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDS6900S |
Fairchild Semiconductor |
Dual N-Ch PowerTrench SyncFet |
|
| 5 | FDS6910 |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 6 | FDS6910 |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FDS6911 |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FDS6912 |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 9 | FDS6912A |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 10 | FDS6912A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 11 | FDS6930A |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 12 | FDS6930A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|