These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to d.
RDS(ON) = 0.028 Ω @ VGS = 10 V
• 6 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
• Optimized for use in switching DC/DC converters with PWM controllers
• Very fast switching.
• Low gate charge
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
6 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 °C
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6910 |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDS6910 |
Fairchild Semiconductor |
MOSFET | |
3 | FDS6911 |
Fairchild Semiconductor |
MOSFET | |
4 | FDS6912A |
ON Semiconductor |
Dual N-Channel MOSFET | |
5 | FDS6912A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
6 | FDS6900AS |
ON Semiconductor |
Dual N-Channel MOSFET | |
7 | FDS6900AS |
Fairchild Semiconductor |
Dual N-Ch PowerTrench SyncFET | |
8 | FDS6900AS-G |
ON Semiconductor |
Dual N-Channel MOSFET | |
9 | FDS6900S |
Fairchild Semiconductor |
Dual N-Ch PowerTrench SyncFet | |
10 | FDS6930A |
ON Semiconductor |
Dual N-Channel MOSFET | |
11 | FDS6930A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
12 | FDS6930B |
Kexin |
Dual N-Channel MOSFET |