FDS6900AS-G - ON Semiconductor

FDS6900AS-G Dual N-Channel MOSFET

The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The .

Features

• Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V ♦ RDS(on) = 22 mW at VGS = 10 V ♦ RDS(on) = 28 mW at VGS = 4.5 V
• Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V ♦ RDS(on) = 27 mW at VGS = 10 V ♦ RDS(on) = 34 mW at VGS = 4.5 V
• 100% RG (Gate Resistance) Tested
• These Devices are Pb−Free and are RoHS Compliant Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q2 Q1 Units VDSS VGSS Drain−Source Voltage Gate−Source Voltage 30 30 V ±20 ±20 V ID Drain Curre.