The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The .
• Q2: Optimized to Minimize Conduction Losses Includes SyncFET
Schottky Body Diode, 8.2 A, 30 V
♦ RDS(on) = 22 mW at VGS = 10 V ♦ RDS(on) = 28 mW at VGS = 4.5 V
• Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC
typical), 6.9 A, 30 V
♦ RDS(on) = 27 mW at VGS = 10 V ♦ RDS(on) = 34 mW at VGS = 4.5 V
• 100% RG (Gate Resistance) Tested
• These Devices are Pb−Free and are RoHS Compliant
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Q2
Q1 Units
VDSS VGSS
Drain−Source Voltage Gate−Source Voltage
30
30
V
±20
±20
V
ID Drain Curre.
Dual N-Ch PowerTrench® SyncFET™ Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6900AS-G |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDS6900S |
Fairchild Semiconductor |
Dual N-Ch PowerTrench SyncFet | |
3 | FDS6910 |
ON Semiconductor |
Dual N-Channel MOSFET | |
4 | FDS6910 |
Fairchild Semiconductor |
MOSFET | |
5 | FDS6911 |
Fairchild Semiconductor |
MOSFET | |
6 | FDS6912 |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
7 | FDS6912A |
ON Semiconductor |
Dual N-Channel MOSFET | |
8 | FDS6912A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
9 | FDS6930A |
ON Semiconductor |
Dual N-Channel MOSFET | |
10 | FDS6930A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
11 | FDS6930B |
Kexin |
Dual N-Channel MOSFET | |
12 | FDS6930B |
Fairchild Semiconductor |
Dual N-Channel MOSFET |