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FDS6815 |
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| Part Number | FDS6815 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a ... |
| Features |
-5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications Load switch Battery protection Power management
D2 D1 D1 S2 G2 D2
5 6 7 8 4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
G1 S1
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±12
(Note... |
| Document |
 FDS6815 Data Sheet
PDF 231.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6812A |
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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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| 2 | FDS6814 |
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| 3 | FDS6875 |
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| 4 | FDS6875 |
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| 5 | FDS6890A |
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