TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are.
• 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode po.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP7N50F |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP7N50U |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP7N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDP7030BL |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP7030L |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDP7042L |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDP7045L |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP75N08 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDP75N08A |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDP79N15 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP020N06B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
12 | FDP023N08B |
Fairchild Semiconductor |
MOSFET |