These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switc.
100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V RDS(ON) = 0.010 Ω @ VGS=5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted FDP7030L 30 ±20 (Note 1) FDB7030L Units V V A Gat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP7030BL |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP7042L |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP7045L |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDP75N08 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP75N08A |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDP79N15 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDP7N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP7N50F |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDP7N50U |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDP7N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP020N06B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
12 | FDP023N08B |
Fairchild Semiconductor |
MOSFET |