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FDP7N50 |
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| Part Number | FDP7N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t... |
| Features |
• 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode po... |
| Document |
 FDP7N50 Data Sheet
PDF 318.50KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP7N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP7N50U |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDP7N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP7030BL |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDP7030L |
Fairchild Semiconductor |
N-Channel MOSFET |
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