These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability
May 2006
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and activ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP7030BL |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP7030L |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP7042L |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDP7045L |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP75N08 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDP75N08A |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDP7N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP7N50F |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDP7N50U |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDP7N60NZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP020N06B |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
12 | FDP023N08B |
Fairchild Semiconductor |
MOSFET |