This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are require.
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D D 9A 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted Ratings Units VDSS VGSS ID PD TJ,TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Not.
This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDN359BN |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDN359BN |
Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET | |
3 | FDN352AP |
Fairchild Semiconductor |
PowerTrench MOSFET | |
4 | FDN352AP |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDN357N |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDN357N |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDN358P |
Fairchild Semiconductor |
P-Channel MOSFET | |
8 | FDN358P |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET | |
10 | FDN302P |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET | |
12 | FDN304P |
Kexin |
P-Channel MOSFET |