FDN359AN |
Part Number | FDN359AN |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s... |
Features |
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D
D
9A 35
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
Ratings Units
VDSS VGSS ID PD TJ,TSTG RθJA RθJC
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Not... |
Document |
FDN359AN Data Sheet
PDF 264.86KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDN359AN |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDN359BN |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDN359BN |
Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET | |
4 | FDN352AP |
Fairchild Semiconductor |
PowerTrench MOSFET | |
5 | FDN352AP |
ON Semiconductor |
P-Channel MOSFET |