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This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is need.
■
–1.3 A,
–30V
–1.1 A,
–30V RDS(ON) = 180 mΩ @ VGS =
–10V RDS(ON) = 300 mΩ @ VGS =
–4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and ba.
FDN352AP - ON Semiconductor
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailore.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDN357N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN357N |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDN358P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN358P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDN359AN |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDN359AN |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDN359BN |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FDN359BN |
Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET |
|
| 9 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 10 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |
|
| 11 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 12 | FDN304P |
Kexin |
P-Channel MOSFET |
|