FDN304P P-Channel MOSFET Datasheet

FDN304P P-Channel MOSFET

SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70mΩ (VGS =-2.5V) ● RDS(ON) ＜ 100mΩ (VGS =-1.8V) D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.So.

Features

● VDS (V) =-20V
● ID =-2.4A (VGS =-4.5V)
● RDS(ON) ＜ 52mΩ (VGS =-4.5V)
● RDS(ON) ＜ 70mΩ (VGS =-2.5V)
● RDS(ON) ＜ 100mΩ (VGS =-1.8V) D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain 0-0.1 +0.10.68 -0.1 GS
■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction-.

The same part from a different manufacturer

FDN304P - ON Semiconductor

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for .

FDN304P - Fairchild Semiconductor

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized fo.

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FDN304P - Kexin