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FDN352AP |
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| Part Number | FDN352AP |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gat... |
| Features |
■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and ba... |
| Document |
 FDN352AP Data Sheet
PDF 149.14KB |
| Distributor | Stock | Price | Buy |
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