FDG6318P - Fairchild Semiconductor

FDG6318P Dual P-Channel/ Digital FET

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Features • –0.5 .

Features

•
  –0.5 A,
  –20 V. RDS(ON) = 780 mΩ @ VGS =
  –4.5 V RDS(ON) = 1200 mΩ @ VGS =
  –2.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
• Compact industry standard SC70-6 surface mount package Applications
• Battery management S G D D G Pin 1 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S G 2 or 5 S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parame.