FDG6317NZ - ON Semiconductor

FDG6317NZ Dual N-Channel MOSFET

This dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely Iow RDS(ON) and gate charge (QG) in a small package. Features • 0.7 A, 20 V ♦ RDS(ON) = 400 mW @ VGS.

Features

• 0.7 A, 20 V ♦ RDS(ON) = 400 mW @ VGS = 4.5 V ♦ RDS(ON) = 550 mW @ VGS = 2.5 V
• Gate−Source Zener for ESD Ruggedness
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(ON)
• Compact Industry Standard SC70−6 Surface Mount Package
• These Devices are Pb−Free and are RoHS Compliant Applications
• DC−DC Converter
• Power Management
• Load Switch MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current: Continuous (Note1) Pulsed 20 V ±12 V A 0.7 2.1 PD Power Dissipa.