FDG6303N - Fairchild Semiconductor

FDG6303N Dual N-Channel Digital FET

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors.

Features

25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. SC70-6 SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 D1 G2 S2 1 or 4
* 6 or 3 .03 2 or 5 5 or 2 SC70-6 S1 G1 D2 3 or 6 4 or 1
*
* The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affe.