FDG314P - Fairchild Semiconductor

FDG314P Digital FET/ P-Channel

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular p.

Features

• -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
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• Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model). Compact industry standard SC70-6 surface mount package. Applications
• Power Management
• Load switch
• Signal switch D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J, T stg ESD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted Parameter Rat.