FDG326P - Fairchild Semiconductor

FDG326P P-Channel 1.8V Specified PowerTrench MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Low gate charge • High p.

Features

•
  –1.5 A,
  –20 V. RDS(ON) = 140 mΩ @ VGS =
  –4.5 V RDS(ON) = 180 mΩ @ VGS =
  –2.5 V RDS(ON) = 250 mΩ @ VGS =
  –1.8 V Applications
• Battery management
• Load switch
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings
  –20 ±8 (Note 1a) Units V V A W °C
  –1.5
  –6 0.75 0.48 -55 to +150 Power Dissipation f.