FDG315N - Fairchild Semiconductor

FDG315N N-Channel Logic Level PowerTrench MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are require.

Features

• 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
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• Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications
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• DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 2 6 0.75 0.48 -55 to +150 Units V V A W °C (Note 1a) Power Di.