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FDD5353 |
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| Part Number | FDD5353 |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Tre... |
| Features |
General Description
Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RoHS Compliant Application Inverter Synchronous rectifier Primary switch G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Vo... |
| Document |
 FDD5353 Data Sheet
PDF 344.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD5202P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 2 | FDD5612 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD5612 |
Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
|
| 4 | FDD5614P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDD5614P |
Fairchild Semiconductor |
60V P-Channel PowerTrench MOSFET |
|