FDD3690 - Fairchild Semiconductor

FDD3690 100V N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at v.

Features

• 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V
• Low gate charge (28nC typical)
• Fast Switching
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C Pulsed Power Dissipation @TC=25°C @TA=25°C @TA=25°C (Note 3) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 100 ±20 22 75 60 3.8 1.6
  –55 to +175 Units V V A W TJ,.