FDC86244 - Fairchild Semiconductor

FDC86244 N-Channel Power Trench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ Load Switch „ Synchronous Rectifier „ Primary Switch S D D D G D Pin 1 D -6 D 6 1 D SuperSOTTM 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symb.

Features

„ Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A „ Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ Load Switch „ Synchronous Rectifier „ Primary Switch S D D D G D Pin 1 D -6 D 6 1 D Supe.