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This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Vo.
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Application Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Sour.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDC8886 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDC8878 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDC855N |
Fairchild Semiconductor |
Single N-Channel PowerTrench MOSFET |
|
| 4 | FDC8601 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDC8601 |
Fairchild Semiconductor |
N-Channel Shielded Gate PowerTrench MOSFET |
|
| 6 | FDC8602 |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 7 | FDC8602 |
Fairchild Semiconductor |
Dual N-Channel Shielded Gate PowerTrench MOSFET |
|
| 8 | FDC86244 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDC86244 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 10 | FDC-xx |
Premo |
EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter |
|
| 11 | FDC05 |
Snaptec |
5 WATTS OUTPUT POWER |
|
| 12 | FDC05 |
AMTEX |
DC/DC Converter |
|