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FDC86244 |
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| Part Number | FDC86244 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance a... |
| Features |
• Shielded Gate MOSFET Technology • Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A • Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • Load Switch • Synchronous Rectifier • Primary Switch www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.244&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Product... |
| Document |
 FDC86244 Data Sheet
PDF 531.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC86244 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 2 | FDC8601 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDC8601 |
Fairchild Semiconductor |
N-Channel Shielded Gate PowerTrench MOSFET |
|
| 4 | FDC8602 |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDC8602 |
Fairchild Semiconductor |
Dual N-Channel Shielded Gate PowerTrench MOSFET |
|