Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. A.
General Description Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. Applications Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDC8884 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDC8886 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDC855N |
Fairchild Semiconductor |
Single N-Channel PowerTrench MOSFET | |
4 | FDC8601 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDC8601 |
Fairchild Semiconductor |
N-Channel Shielded Gate PowerTrench MOSFET | |
6 | FDC8602 |
ON Semiconductor |
Dual N-Channel MOSFET | |
7 | FDC8602 |
Fairchild Semiconductor |
Dual N-Channel Shielded Gate PowerTrench MOSFET | |
8 | FDC86244 |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDC86244 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET | |
10 | FDC-xx |
Premo |
EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter | |
11 | FDC05 |
Snaptec |
5 WATTS OUTPUT POWER | |
12 | FDC05 |
AMTEX |
DC/DC Converter |