FDC638P - Fairchild Semiconductor

FDC638P P-Channel MOSFET

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery cha.

Features

-4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 pin 1 8 2 G D D 5 SuperSOT TM -6 3 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain-Source Voltage TA = 25°C unless otherwise note Ratings -20 ±8 (Note 1a) Units V V A Gate-Source Voltage - Continuous Drain Current .