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FDC638P |
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| Part Number | FDC638P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain lo... |
| Features |
-4.5 A, -20 V. R DS(ON) = 0.045
R DS(ON) = 0.065
Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V.
Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
TM
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
.63
pin 1
8
2
G D D
5
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings Symbol Parameter
VDSS VGSS ID Drain-Source Voltage
TA = 25°C unless otherwise note
Ratings
-20 ±8
(Note 1a)
Units
V V A
Gate-Source Voltage - Continuous Drain Current ... |
| Document |
 FDC638P Data Sheet
PDF 240.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC638APZ |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 2 | FDC638APZ |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC638P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 5 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|