FDC6306P - Fairchild Semiconductor

FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applicatio.

Features

• -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V
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• Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications
• Load switch
• Battery protection
• Power management D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ra.