FDC6308P - Fairchild Semiconductor

FDC6308P Dual P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigg.

Features

• -1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V • • • • • Extended VGSS range (±12V) for battery applications. Low gate charge (3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications • Load switch • Battery protection • Power management D2 S1 D1 SuperSOTTM-6 package: small footprint (72% smaller     than standard SO-8); low profile (1mm thick). 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source .