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FDC6308P |
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| Part Number | FDC6308P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of ga... |
| Features |
-1.7 A, -18 V. RDS(ON) = 0.18 Ω @ VGS = -4.5 V RDS(ON) = 0.30 Ω @ VGS = -2.5 V
Extended VGSS range (±12V) for battery applications. Low gate charge (3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
Applications Load switch Battery protection Power management
D2 S1 D1
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
4
3
5
2
G2
SuperSOT TM -6
S2 G1
TA = 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source ... |
| Document |
 FDC6308P Data Sheet
PDF 325.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 2 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 4 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|