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FDC6306P |
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| Part Number | FDC6306P |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low ... |
| Features |
• -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V • • • • Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ra... |
| Document |
 FDC6306P Data Sheet
PDF 235.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 2 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 4 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|