FDB8453LZ - Fairchild Semiconductor

FDB8453LZ N-Channel PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless o.

Features

„ Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A „ Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A „ HBM ESD protection level of 7.6kV typical (note 4) „ Fast Switching „ RoHS Compliant August 2007 tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol.