FDB8453LZ |
Part Number | FDB8453LZ |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has ... |
Features |
Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
August 2007
tm
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
Inverter Power Supplies
D
D
G S
TO-263AB
FDB Series
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol... |
Document |
FDB8453LZ Data Sheet
PDF 269.80KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDB8441 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDB8442 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
3 | FDB8443 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
4 | FDB8443-F085 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDB8443_F085 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |