FDB8444 - Fairchild Semiconductor

FDB8444 N-Channel MOSFET

FDB8444 N-Channel PowerTrench® MOSFET MPLEMENTATION February 2006 FDB8444 N-Channel PowerTrench® MOSFET 40V, 70A, 5.5mΩ Features „ Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A „ Typ Qg(TOT) = 91nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications .

Features

„ Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A „ Typ Qg(TOT) = 91nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems AD FREE I LE GATE SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) D G S ©2006 Fairchild Semiconductor Corporation 1 FDB8444 Rev A2 (W) www.fairchildsemi.com FDB8444 N-Channel PowerTrenc.