FDB8447L - Fairchild Semiconductor

FDB8447L N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. „ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A „ Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A „ Fast Switching „ RoHS Compliant Application „ I.

Features

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. „ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A „ Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A „ Fast Switching „ RoHS Compliant Application „ Inverter „ Power Supplies D D G G S TO-263AB FDB Series www.DataSheet4U.com S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Sourc.