FDB3860 - Fairchild Semiconductor

FDB3860 N-Channel MOSFET

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings .

Features

„ Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.com Symbol VDS VGS ID E.