Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel d.
• RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A
• Low Gate Charge (Typ. 36.8 nC)
• Low Crss (Typ. 39 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC−DC Power Supply
DATA SHEET www.onsemi.com
VDSS 250 V
RDS(ON) MAX 94 mW @ 10 V
ID MAX 33 A
D
G S
D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K FDB 33N25
$Y &Z &3 &K FDB33N25
= Logo = Assembly Plant Code = 3−Digit Date Code Format = 2−Digits Lot Run Traceability Code = Device Code
D
G
S N−Channel
ORDERING INFORMATION
See de.
FDB33N25 - Fairchild Semiconductor
May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDB3502 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDB3632 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDB3632 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FDB3632 |
Kexin |
N-Channel MOSFET |
|
| 5 | FDB3632 |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDB3632-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDB3652 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FDB3652 |
Kexin |
N-Channel MOSFET |
|
| 9 | FDB3672 |
Kexin |
N-Channel MOSFET |
|
| 10 | FDB3672 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FDB3672_F085 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDB3682 |
Fairchild Semiconductor |
N-Channel MOSFET |
|