FDB3502 - Fairchild Semiconductor

FDB3502 MOSFET

„ Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ Synchronous rectifier D D G S TO-263AB FDB Ser.

Features

General Description „ Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ Synchronous rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (.