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FDB3860 |
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| Part Number | FDB3860 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness fo... |
| Features |
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion Synchronous Rectifier
D
D
G S TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheet4U.com Symbol VDS
VGS ID E... |
| Document |
 FDB3860 Data Sheet
PDF 346.44KB |
| Distributor | Stock | Price | Buy |
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