EPC2115 - EPC

EPC2115 Integrated Gate Driver eGaN

The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions. The ultra-low capacitance and.

Features

• Integrated Gate Driver
  – Low Propagation Delay
  – Up to 7 MHz Operation
  – Operates from 5 V Supply
• Dual 88-mΩ, 150-V eGaN FET
• Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS:
• Wireless Power (Highly Resonant and Inductive)
• High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm B.