EPC2112 - EPC

EPC2112 Integrated Gate Driver eGaN

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA. The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions. The ultra-low ca.

Features

• Integrated Gate Driver
  – Low Propagation Delay
  – Up to 7 MHz Operation
  – Operates from 5 V Supply
• 200 V, 40-mΩ eGaN FET
• Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS:
• Wireless Power (Highly Resonant and Inductive)
• High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount.