EPC2052 - EPC

EPC2052 Power Transistor

eGaN® FET DATASHEET EPC2052 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ID , 8.2 A D G S EPC2052 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG an.

Features

ermal Resistance, Junction-to-Board 15 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 74 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. EPC2052 eGaN® FETs are supplied in passivated die form with solder bumps. Die size: 1.5 mm x 1.5 mm Applications
• 48 V Servers
• Lidar/Pulsed Power
• Isolated Power Supplies
• Point of Load Converters
• Class D Audio
• LED Lighting
• Low Inductance Motor D.