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eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and z.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | EPC2052 |
EPC |
Power Transistor |
|
| 2 | EPC2053 |
EPC |
Power Transistor |
|
| 3 | EPC20 |
ACME |
EPC Cores |
|
| 4 | EPC2001 |
EPC |
Power Transistor |
|
| 5 | EPC2001C |
EPC |
Power Transistor |
|
| 6 | EPC2007 |
EPC |
Power Transistor |
|
| 7 | EPC2010 |
EPC |
Power Transistor |
|
| 8 | EPC2010C |
EPC |
Power Transistor |
|
| 9 | EPC2012 |
EPC |
Power Transistor |
|
| 10 | EPC2012C |
EPC |
Power Transistor |
|
| 11 | EPC2014 |
EPC |
Power Transistor |
|
| 12 | EPC2015 |
EPC |
Power Transistor |
|