EN29GL064 - Eon Silicon Solution

EN29GL064 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory

The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applicati.

Features

• Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations
• High performance - Access times as fast as 70 ns
• VIO Input/Output 1.65 to 3.6 volts - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
• 8-word/16-byte page read buffer
• 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
• Secured Silicon Sector region - 128-word/256-byte sector for permanent, secure identification through an 8-word/16byte random Electronic Serial Number - .