EN29F080 - EON

EN29F080 8 Megabit (1024K x 8-bit) Flash Memory

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F080 features 5.0V voltage read and write operation, with access times as fast as 45ns to elimi.

Features

• 5.0V ± 10%, single power supply operation - Minimizes system level power requirements
• Manufactured on 0.35 µm process technology
• High performance - Access times as fast as 45 ns
•
• Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: 16 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Group sector protection: Hardware method of locking of sector groups to prevent any program or erase operations within that sec.