EN29F040 - ETC

EN29F040 4 Megabit (512K x 8-bit) Flash Memory

The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 features 5.0V voltage read and write operation, with access times as fast as 45ns to elimin.

Features

• 5.0V operation for read/write/erase operations
• Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
• Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector.