EN29F002N - ETC

EN29F002N 2 Megabit (256K x 8-bit) Flash Memory

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byt.

Features

• 5.0V ± 10% for both read/write operation
• Read Access Time - 45ns, 55ns, 70ns, and 90ns
• Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF
• Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
• Boot Block Top/Bottom Programming Architecture
• High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical
• JEDEC standard DATA polling and toggle bits feature
• Hardware RESET Pin (n/a for EN29F002N)
• Single Sector and Chip .