N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 7.5mΩ 10.5mΩ ID@TC=25°C 50A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMP75N03.
RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 2.5 °C / W 50 2019/08/06 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMP75N03HR LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMP-8603 |
EnGenius |
Mini-PCI Adapter | |
2 | EMP11 |
Rohm |
Switching diode | |
3 | EMP16N04HS |
Excelliance MOS |
MOSFET | |
4 | EMP18K03HPCS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | EMP19K03HPC |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | EMP19K03HPCS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
7 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
8 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
9 | EMP202 |
EMPIA Technology |
Single-Chip Dual-Channel AC97 Audio Codec | |
10 | EMP2033 |
Elite Semiconductor |
300mA CMOS Linear Regulator | |
11 | EMP207 |
Excelics Semiconductor |
17.0 - 20.0 GHz Power Amplifier MMIC | |
12 | EMP208 |
Excelics Semiconductor |
17.5 - 20.0 GHz Power Amplifier MMIC |