Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 6.6mΩ 2.4mΩ 8.8mΩ 3.4mΩ ID @TC=25℃ 47.0A 93.0A ID @TA=25℃ 16.0A 27.0A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage .
UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=21A, Rated VDS=30V N-CH_Q1 ▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=39A, Rated VDS=30V N-CH_Q2 ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Q1 Q2 Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 365°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test 5 3.5 40 40 65 65 UNIT V A mJ W W °C UNIT °C/W 2020/8/12 P.1 A.1 EMP19K03HPC ▪Q1_ELECTRICAL C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMP19K03HPCS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMP11 |
Rohm |
Switching diode | |
3 | EMP16N04HS |
Excelliance MOS |
MOSFET | |
4 | EMP18K03HPCS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | EMP-8603 |
EnGenius |
Mini-PCI Adapter | |
6 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
7 | EMP201 |
Excelics Semiconductor |
17.5 - 21.0 GHz Power Ammplifier MMIC | |
8 | EMP202 |
EMPIA Technology |
Single-Chip Dual-Channel AC97 Audio Codec | |
9 | EMP2033 |
Elite Semiconductor |
300mA CMOS Linear Regulator | |
10 | EMP207 |
Excelics Semiconductor |
17.0 - 20.0 GHz Power Amplifier MMIC | |
11 | EMP208 |
Excelics Semiconductor |
17.5 - 20.0 GHz Power Amplifier MMIC | |
12 | EMP209 |
Excelics Semiconductor |
17.5 - 20.0 GHz Power Amplifier MMIC |